Basak, H. Et Al. 2010. The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures. 3rd International Symposium on Growth of III-Nitrides (ISGN) , (Montpellier, France).

Basak, H., Erol, A., Donmez, Ö., Arikan, M. C., & Saarinen, M., (2010). The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures . 3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, France

Basak, H. Et Al. "The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures," 3rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, France, 2010

Basak, H. Et Al. "The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures." 3rd International Symposium on Growth of III-Nitrides (ISGN) , Montpellier, France, 2010

Basak, H. Et Al. (2010) . "The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures." 3rd International Symposium on Growth of III-Nitrides (ISGN) , Montpellier, France.

@conferencepaper{conferencepaper, author={H. Basak Et Al. }, title={The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures}, congress name={3rd International Symposium on Growth of III-Nitrides (ISGN)}, city={Montpellier}, country={France}, year={2010}}