Donmez, Ö. Et Al. 2020. Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.35, no.2 .

Donmez, Ö., Aydin, M., Ardali, S., Yildirim, S., Tiras, E., Nutku, F., ... Cetinkaya, Ç.(2020). Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.35, no.2.

Donmez, Ömer Et Al. "Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.35, no.2, 2020

Donmez, Ömer Et Al. "Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.35, no.2, 2020

Donmez, Ö. Et Al. (2020) . "Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.35, no.2.

@article{article, author={Ömer DÖNMEZ Et Al. }, title={Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2020}