M. C. Altay And S. Eroglu, "Growth of Ge Nanowires by Chemical Vapor Deposition at Atmospheric Pressure Using Readily Available Precursors GeO2 and C2H5OH," JOM , vol.72, no.12, pp.4340-4345, 2020
Altay, M. C. And Eroglu, S. 2020. Growth of Ge Nanowires by Chemical Vapor Deposition at Atmospheric Pressure Using Readily Available Precursors GeO2 and C2H5OH. JOM , vol.72, no.12 , 4340-4345.
Altay, M. C., & Eroglu, S., (2020). Growth of Ge Nanowires by Chemical Vapor Deposition at Atmospheric Pressure Using Readily Available Precursors GeO2 and C2H5OH. JOM , vol.72, no.12, 4340-4345.
Altay, M., And Şerafettin EROĞLU. "Growth of Ge Nanowires by Chemical Vapor Deposition at Atmospheric Pressure Using Readily Available Precursors GeO2 and C2H5OH," JOM , vol.72, no.12, 4340-4345, 2020
Altay, M. C. And Eroglu, Şerafettin. "Growth of Ge Nanowires by Chemical Vapor Deposition at Atmospheric Pressure Using Readily Available Precursors GeO2 and C2H5OH." JOM , vol.72, no.12, pp.4340-4345, 2020
Altay, M. C. And Eroglu, S. (2020) . "Growth of Ge Nanowires by Chemical Vapor Deposition at Atmospheric Pressure Using Readily Available Precursors GeO2 and C2H5OH." JOM , vol.72, no.12, pp.4340-4345.
@article{article, author={M. Cumbul Altay And author={Şerafettin EROĞLU}, title={Growth of Ge Nanowires by Chemical Vapor Deposition at Atmospheric Pressure Using Readily Available Precursors GeO2 and C2H5OH}, journal={JOM}, year=2020, pages={4340-4345} }