Yarman, B. S. Et Al. 2007. Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz. International Symposium on Signals, Circuits and Systems , (Iasi, Romania), 65-66.

Yarman, B. S., Retdian, N., Takagi, S., & Fujii, N., (2007). Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz . International Symposium on Signals, Circuits and Systems (pp.65-66). Iasi, Romania

Yarman, B. Et Al. "Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz," International Symposium on Signals, Circuits and Systems, Iasi, Romania, 2007

Yarman, B. S. Et Al. "Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz." International Symposium on Signals, Circuits and Systems , Iasi, Romania, pp.65-66, 2007

Yarman, B. S. Et Al. (2007) . "Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz." International Symposium on Signals, Circuits and Systems , Iasi, Romania, pp.65-66.

@conferencepaper{conferencepaper, author={B. Siddik Yarman Et Al. }, title={Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz}, congress name={International Symposium on Signals, Circuits and Systems}, city={Iasi}, country={Romania}, year={2007}, pages={65-66} }