S. Mariappan Et Al. , "An 0.4-2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power," IEEE ACCESS , vol.9, pp.48831-48840, 2021
Mariappan, S. Et Al. 2021. An 0.4-2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power. IEEE ACCESS , vol.9 , 48831-48840.
Mariappan, S., Rajendran, J., Yusof, Y. M., Noh, N. M., & Yarman, B. S., (2021). An 0.4-2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power. IEEE ACCESS , vol.9, 48831-48840.
Mariappan, Selvakumar Et Al. "An 0.4-2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power," IEEE ACCESS , vol.9, 48831-48840, 2021
Mariappan, Selvakumar Et Al. "An 0.4-2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power." IEEE ACCESS , vol.9, pp.48831-48840, 2021
Mariappan, S. Et Al. (2021) . "An 0.4-2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power." IEEE ACCESS , vol.9, pp.48831-48840.
@article{article, author={Selvakumar Mariappan Et Al. }, title={An 0.4-2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power}, journal={IEEE ACCESS}, year=2021, pages={48831-48840} }