Y. Sun Et Al. , "Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications," OPTICAL AND QUANTUM ELECTRONICS , vol.40, pp.403-405, 2009
Sun, Y. Et Al. 2009. Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications. OPTICAL AND QUANTUM ELECTRONICS , vol.40 , 403-405.
Sun, Y., Balkan , N., EROL, A., & ARIKAN, M. Ç., (2009). Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications. OPTICAL AND QUANTUM ELECTRONICS , vol.40, 403-405.
Sun, Y. Et Al. "Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications," OPTICAL AND QUANTUM ELECTRONICS , vol.40, 403-405, 2009
Sun, Y. Et Al. "Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications." OPTICAL AND QUANTUM ELECTRONICS , vol.40, pp.403-405, 2009
Sun, Y. Et Al. (2009) . "Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications." OPTICAL AND QUANTUM ELECTRONICS , vol.40, pp.403-405.
@article{article, author={Y. Sun Et Al. }, title={Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications}, journal={OPTICAL AND QUANTUM ELECTRONICS}, year=2009, pages={403-405} }