A. Kuntman Et Al. , "A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors," SOLID-STATE ELECTRONICS , vol.48, no.2, pp.217-223, 2004
Kuntman, A. Et Al. 2004. A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors. SOLID-STATE ELECTRONICS , vol.48, no.2 , 217-223.
Kuntman, A., ardalı, a., kuntman, h., & Kacar, F., (2004). A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors. SOLID-STATE ELECTRONICS , vol.48, no.2, 217-223.
Kuntman, Ayten Et Al. "A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors," SOLID-STATE ELECTRONICS , vol.48, no.2, 217-223, 2004
Kuntman, Ayten Et Al. "A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors." SOLID-STATE ELECTRONICS , vol.48, no.2, pp.217-223, 2004
Kuntman, A. Et Al. (2004) . "A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors." SOLID-STATE ELECTRONICS , vol.48, no.2, pp.217-223.
@article{article, author={Ayten KUNTMAN Et Al. }, title={A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors}, journal={SOLID-STATE ELECTRONICS}, year=2004, pages={217-223} }