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High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN
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Ö. Donmez Et Al. , "High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN," JOURNAL OF APPLIED PHYSICS , vol.110, no.10, 2011

Donmez, Ö. Et Al. 2011. High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN. JOURNAL OF APPLIED PHYSICS , vol.110, no.10 .

Donmez, Ö., Gunes, M., Erol, A., Arikan, M. C., & Balkan, N., (2011). High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN. JOURNAL OF APPLIED PHYSICS , vol.110, no.10.

Donmez, Ömer Et Al. "High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN," JOURNAL OF APPLIED PHYSICS , vol.110, no.10, 2011

Donmez, Ömer Et Al. "High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN." JOURNAL OF APPLIED PHYSICS , vol.110, no.10, 2011

Donmez, Ö. Et Al. (2011) . "High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN." JOURNAL OF APPLIED PHYSICS , vol.110, no.10.

@article{article, author={Ömer DÖNMEZ Et Al. }, title={High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN}, journal={JOURNAL OF APPLIED PHYSICS}, year=2011}