Sun, Y. Et Al. 2007. Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications. OPTICAL AND QUANTUM ELECTRONICS , vol.40 , 467-474.

Sun, Y., EROL, A., Balkan , N., & ARIKAN, M. Ç., (2007). Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications. OPTICAL AND QUANTUM ELECTRONICS , vol.40, 467-474.

Sun, Y. Et Al. "Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications," OPTICAL AND QUANTUM ELECTRONICS , vol.40, 467-474, 2007

Sun, Y. Et Al. "Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications." OPTICAL AND QUANTUM ELECTRONICS , vol.40, pp.467-474, 2007

Sun, Y. Et Al. (2007) . "Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications." OPTICAL AND QUANTUM ELECTRONICS , vol.40, pp.467-474.

@article{article, author={Y. Sun Et Al. }, title={Optical And Electrical Properties Of Modulation Doped N And P Type Gainnas/Gaas Quantum Wells For 1.3 Micron Laser Applications}, journal={OPTICAL AND QUANTUM ELECTRONICS}, year=2007, pages={467-474} }