DÖNMEZ, Ö. Et Al. 2013. Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures. Novel Gain Materials And Devices Based On III-V-N/Bi Compounds , (İstanbul, Turkey), 40.

DÖNMEZ, Ö., SARCAN, F., EROL, A., Güneş, M., ARIKAN, M. Ç., Puustinen, J., ... Guina, M.(2013). Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures . Novel Gain Materials And Devices Based On III-V-N/Bi Compounds (pp.40). İstanbul, Turkey

DÖNMEZ, Ömer Et Al. "Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures," Novel Gain Materials And Devices Based On III-V-N/Bi Compounds, İstanbul, Turkey, 2013

DÖNMEZ, Ömer Et Al. "Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures." Novel Gain Materials And Devices Based On III-V-N/Bi Compounds , İstanbul, Turkey, pp.40, 2013

DÖNMEZ, Ö. Et Al. (2013) . "Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures." Novel Gain Materials And Devices Based On III-V-N/Bi Compounds , İstanbul, Turkey, p.40.

@conferencepaper{conferencepaper, author={Ömer DÖNMEZ Et Al. }, title={Thermal Annealing And Nitrogen Induced Effects On Electronic Transport in n- and p-type Modulation Doped GaInNAs GaAs Quantum Well Structures}, congress name={Novel Gain Materials And Devices Based On III-V-N/Bi Compounds}, city={İstanbul}, country={Turkey}, year={2013}, pages={40} }