M. Ç. ARIKAN Et Al. , "PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV," JOURNAL OF PHYSICS C-SOLID STATE PHYSICS , vol.13, no.4, pp.635-650, 1980
ARIKAN, M. Ç. Et Al. 1980. PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS , vol.13, no.4 , 635-650.
ARIKAN, M. Ç., Hatch, C., & Ridley, B., (1980). PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS , vol.13, no.4, 635-650.
ARIKAN, Mehmet, C.B Hatch, And B.K Ridley. "PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV," JOURNAL OF PHYSICS C-SOLID STATE PHYSICS , vol.13, no.4, 635-650, 1980
ARIKAN, Mehmet Ç. Et Al. "PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV." JOURNAL OF PHYSICS C-SOLID STATE PHYSICS , vol.13, no.4, pp.635-650, 1980
ARIKAN, M. Ç. Hatch, C. And Ridley, B. (1980) . "PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV." JOURNAL OF PHYSICS C-SOLID STATE PHYSICS , vol.13, no.4, pp.635-650.
@article{article, author={Mehmet Çetin ARIKAN Et Al. }, title={PHOTOCONDUCTIVITY IN N-TYPE GAAS-O ASSOCIATED WITH THE DEEP LEVEL AT 0.4 EV}, journal={JOURNAL OF PHYSICS C-SOLID STATE PHYSICS}, year=1980, pages={635-650} }