Y. Sun Et Al. , "Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 mu m laser applications," OPTICAL AND QUANTUM ELECTRONICS , vol.40, no.7, pp.467-474, 2008
Sun, Y. Et Al. 2008. Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 mu m laser applications. OPTICAL AND QUANTUM ELECTRONICS , vol.40, no.7 , 467-474.
Sun, Y., Erol, A., YILMAZ, M., Arikan, M. C., ULUĞ, B., Ulug, A., ... Balkan, N.(2008). Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 mu m laser applications. OPTICAL AND QUANTUM ELECTRONICS , vol.40, no.7, 467-474.
Sun, Y. Et Al. "Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 mu m laser applications," OPTICAL AND QUANTUM ELECTRONICS , vol.40, no.7, 467-474, 2008
Sun, Y. Et Al. "Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 mu m laser applications." OPTICAL AND QUANTUM ELECTRONICS , vol.40, no.7, pp.467-474, 2008
Sun, Y. Et Al. (2008) . "Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 mu m laser applications." OPTICAL AND QUANTUM ELECTRONICS , vol.40, no.7, pp.467-474.
@article{article, author={Y. Sun Et Al. }, title={Optical and electrical properties of modulation-doped n and p-type GaxIn1-xNyAs1-y/GaAs quantum wells for 1.3 mu m laser applications}, journal={OPTICAL AND QUANTUM ELECTRONICS}, year=2008, pages={467-474} }