Çetinkaya Ç.

1st International Congress on Modern Sciences, Toskent, Uzbekistan, 10 - 11 May 2022, pp.1

  • Publication Type: Conference Paper / Summary Text
  • City: Toskent
  • Country: Uzbekistan
  • Page Numbers: pp.1
  • Istanbul University Affiliated: Yes


It is very important for innovative potential applications to investigate the properties of new generation optoelectronic devices such as being integrated into buildings, being wearable and flexiable, as well as convectional uses. Therefore, it is an effective approach to use the photonic band gap designed with photonic crystals formed with material systems with different refractive indices for the modification of optical properties without changing the structure or active material of the optoelectronic device. With photonic crystals, the propagation and distribution of electromagnetic waves in an optoelectronic device can be modified and thus the optical properties of the device can be changed. In this study, we theoretically investigated optical properties such as average visible transmittance (AVT) and color of MgF 2 /WO 3 one-dimensional photonic crystal designed at different resonance wavelengths () and periods (N). We also presented the results depending on the angle of incidence of the electromagnetic wave. In calculations, we used the transfer matrix method based on light management engineering. With the calculations, it was determined that the photonic crystals designed with MgF 2 and WO 3 are very useful especially for the photonic band gap to be formed in the wavelength region longer than 600 nm, where there is no absorption. We found that for a given N and , the photonic band gap of the photonic crystal shifts to short-wavelength and its color to blue with increasing angle of incidence. In addition, it was observed that a decrease in AVT and a weakening of the red color characteristics occurred with the shift of from the near infrared to the visible region. In addition, photonic band gap forms to increase internal reflection in devices based on photon absorption with one- dimensional photonic crystal of MgF 2 /WO 3 were determined and appropriate reflectance properties were evaluated on AM1.5G. With these properties, the potential for color modification as a result of the integration of MgF 2 /WO 3 one-dimensional photonic crystal into colored optoelectronic devices is discussed. It has been seen that the MgF 2 /WO 3 one- dimensional photonic crystal can be shifted towards the Planckian locus, especially in semi- transparent optoelectronic devices with red color properties.