Frequency effect on electrical and dielectric performance of Au/n-GaAs structure with RF sputtering MoO3 interfacial layer

Çetinkaya Ç.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.33, no.20, pp.16597-16605, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 33 Issue: 20
  • Publication Date: 2022
  • Doi Number: 10.1007/s10854-022-08556-4
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.16597-16605
  • Istanbul University Affiliated: Yes


The effect of frequency on the electrical and dielectric properties of the metal-semiconductor structure with Molybdenum trioxide (MoO3) interfacial layer was investigated. MoO3 thin film was deposited n-type (100)-oriented GaAs substrate using RF magnetron sputtering method at substrate temperatures of 200 degrees C. Au was chosen as the metal, and electrical analysis of the Au/n-GaAs structure with MoO3 interfacial layer was performed using capacitance-voltage-frequency (C-V-f) conductance-voltage-frequency (G /omega-V-f) measurements. C-V-f and G/omega-V-f outputs were examined, and it was seen that they have inversion, depletion and accumulation regions. According to the experimental results, it was determined that the C and G/omega values were strongly dependent on frequency and voltage, especially in the accumulation and depletion regions. Here, both C and G/omega values decrease with increasing frequency. The structural resistance was obtained by using the C and G/omega data with the Nicollian-Brews method and the series resistance (R-s) values were determined from there. At 3 V, the R-s values were calculated 454 Omega and 102 Omega for 30 kHz and 1 MHz, respectively. In addition, the C and G/omega values were corrected for the 1 MHz value and a comparative evaluation of the corrected and noncorrected values was made. Moreover, the dielectric parameters of the structure were calculated using the measured C and G/omega data. It was indicated that while dielectric constant and dielectric loss decreased with increasing frequency as in C and G/omega, ac conductivity increased due to a decrease in polarization as frequency increased.