Influence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures

Sarcan F., Donmez Ö., Erol A., Gunes M., Arikan M. C., Puustinen J., ...More

APPLIED PHYSICS LETTERS, vol.103, no.8, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 103 Issue: 8
  • Publication Date: 2013
  • Doi Number: 10.1063/1.4819233
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Istanbul University Affiliated: Yes

Abstract

Nitrogen dependence of hole effective mass and hole mobility in p-type modulation doped Ga0.68In0.32NyAs1-y/GaAs quantum well structures with y = 0, 0.009, 0.012, 0.017 are investigated using magnetotransport and Hall effect measurements. Observed N-dependent reduction of the hole effective mass is explained by stronger confinement of holes. Hole effective mass is also found to have hole density dependence due to the strain-induced valance band non-parabolicity. A tendency to decrease in hole effective mass upon annealing can be attributed to the reduction of well width and/or decrease in hole density. A significant improvement in low temperature hole mobility is observed after annealing. (C) 2013 AIP Publishing LLC.