Motion of muonium (hydrogen) in the III-V nitrides

Lichti R., ÇELEBİ Y. G., Cox S., Davis E.

27th International Conference on the Physics of Semiconductors (ICPS-27), Arizona, Amerika Birleşik Devletleri, 26 - 30 Temmuz 2004, cilt.772, ss.255-256 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 772
  • Doi Numarası: 10.1063/1.1994089
  • Basıldığı Şehir: Arizona
  • Basıldığı Ülke: Amerika Birleşik Devletleri
  • Sayfa Sayıları: ss.255-256
  • İstanbul Üniversitesi Adresli: Evet

Özet

Muon spin relaxation measurements in the III-V nitrides have provided data on the motion of each of the three charge-states of the muonium 'isotope' of hydrogen. Motional parameters are established for Mu(+) in InN, Mu(0) in AlN, and Mu(-) in GaN, with qualitative results in the other materials. Both Mu(+) and Mu(0) show tunneling below 300 K and thermal diffusion at higher temperatures leading to interactions with other impurities or extended defects.