Gunn Effect in InGaAs Epilayer Structures

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Kalyon G., Mutlu S., Perkitel İ., Demir İ., Erol A.

16th NANOSCIENCE & NANOTECHNOLOGY CONFERENCE, Ankara, Türkiye, 5 - 08 Eylül 2022, ss.67

  • Yayın Türü: Bildiri / Özet Bildiri
  • Basıldığı Şehir: Ankara
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.67
  • İstanbul Üniversitesi Adresli: Evet

Özet

In this study, we have investigated emission characteristic and Gunn oscillations of InGaAs- based light emitter that depends

on Gunn effect observed from domain transition along the device. The structures were grown by the Metal Organic Vapour

Phase Epitaxy (MOVPE) with an alloy composition on %In = 0.53 and defined in a simple bar structure with different contact

geometries using standard pholithograpy techniques. Threshold electric field was determined from the beginning of the NDR

to observe Gunn oscillations. In the electroluminescence measurements at this threshold electric field value (3kV/cm) [1] , it

is observed that this structure emits at a wavelength of about 1600 nm. Above threshold electric value a drastic increase at the

emission has been observed. Electrical measurements were conducted at a pulse width of applied voltage of 20ns, 40ns and

60ns. From the beginning of the NDR, Gunn oscillations have observed with a frequency of approximately between 0,5 GHz

and 1GHz depending on the electric field.