Akademik Veri Yönetim Sistemi
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024 (SCI-Expanded)
The novel XOR, OR, and NAND optical logic gates have been investigated using GaAs-based Hot Electron Light Emission and Lasing in Semiconductor Heterostructures (HELLISH) devices. The HELLISH devices are fabricated in the Top Hat-HELLISH (TH-HELLISH) geometry to achieve a nonlinear potential distribution at the p-n junction, which consists of a 13 nm thick GaAs quantum well placed on the n-side of the junction. Logic gates whose input part is designed as an electric field output beam incorporate four independent contacts to the p- and n-type layers. Electroluminescence measurements of the output beam are performed by applying a pulsed voltage of approximate to 150 V with a pulse width of 200 ns and a frequency of 20 kHz to the contacts of the TH-HELLISH device. At room temperature, the primary emission wavelength of the optical logic gates is around 840 +/- 1 nm. It is expected that optical logic gates obtained using this type of GaAs semiconductor structure have crucial potential to be components for high-speed optical communication technology due to their simplicity, polarity-independent operation, and emission wavelength. The study proposes a novel design for XOR, OR, and NAND logic gates using a GaAs/AlGaAs quantum well structure. The Top Hat-Hot Electron Light Emission and Lasing in Semiconductor Heterostructures device has two terminals for the XOR logic gate and three terminals for the OR and NAND logic gates. The logic gate operataion is analyzed using electroluminescence measurements.image (c) 2024 WILEY-VCH GmbH