Influence of Bi on dielectric properties of GaAs1-xBix alloys

Ulutas K., Yakut Ş., Bozoglu D., Deger D., Arslan M., Erol A.

MATERIALS SCIENCE-POLAND, vol.37, no.2, pp.244-248, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 37 Issue: 2
  • Publication Date: 2019
  • Doi Number: 10.2478/msp-2019-0025
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.244-248
  • Keywords: GaAs1-xBix, alloys, dielectric properties, dielectric modulus, ELECTRONIC-PROPERTIES, RELAXATION BEHAVIOR, CONDUCTIVITY, MODULUS, IMPEDANCE
  • Istanbul University Affiliated: Yes


Pure GaAs and GaAs1-xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs1-xBix samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs1-xBix, presented in the literature.