Electrical properties of TlSbS2 Semiconductors


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Koç M., YILDIRIM S.

Türk Fizik Derneği 32. Uluslararası Fizik Kongresi, Muğla, Turkey, 6 - 09 September 2016, vol.32, no.32, pp.323

  • Publication Type: Conference Paper / Full Text
  • Volume: 32
  • City: Muğla
  • Country: Turkey
  • Page Numbers: pp.323
  • Istanbul University Affiliated: Yes

Abstract

In present study, the electrical conductivity and electrical mechanism were investigated parallel and perpendicular to the layers of TlSbS2 semiconductor material which belongs to the family of ternary compounds AIII BV C2VI molecule group was prepared by Bridgman-Stockbarger method.  Electrical Conductivity and Dielectric Spectrometer (DES) measurements have been carried out on the crystal materials in the temperature range 293-373K. Temperature dependent electrical conductivity measurements verified semiconducting behavior.  DES results indicate that the dielectric constant values were steady at the high frequency range 102-107 Hz but the dielectric constant values were increased with frequency decreased. In addition, the activation energy of semiconductor material which formed parallel and perpendicular to the layers was taken.