NanoTR12, Kocaeli, Turkey, 3 - 05 June 2016, vol.20, no.6, pp.26
In present study, the electrical conductivity and electrical mechanism were formed parallel and perpendicular to the layers of TlSbS2 semiconductor material which belongs to AIII BV C2VI molecule group was prepared by Bridgman-Stockbarger method , was examined by Electrical Conductivity and Dielectric Spectrometer (DES) instruments and the results were associated with conducting mechanism.
Before electrical measurements, for obtain In / TlSbS2 / In structure, the crystals were cut with dimensions 2 x 2 x 0.7 mm3 and crystals on both surfaces was evaporated Indium (In) metal electrodes under vacuum with 10-2 Torr and the thickness 3000 ?. The current and voltage characteristics measurements were analyzed by Keithley 2430-DC voltage sourcemeter with under vacuum 10-5 Torr, the temperature range between 233-373 Kelvin, were examined by Pt100 temperature sensor, and with a voltage range of 1-1000 Volts.
The dielectric constant of samples which were formed parallel and perpendicular to the layers were investigated frequency range between 10-2 to 10+7 Hz with in nitrogen (N2) ambient gas at room temperature. When the results are compared which were taken by instruments, as the temperature increased the conductivity increased with lineer behaviour and in the voltage region, when the applied voltage increased the conductivity decreased .
Moreover , the DES results indicate that the dielectric constant values were steady at the high frequency (102-107 Hz) but the dielectric constant values were increased with frequecy decreased, in particular they have 800-900 values at low frequncy (10-2). In addition, the activation energy of semiconductor material which formed parallel and perpendicular to the layers was taken. The activation energy value was gained at 1.42 eV