Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures


Dönmez Ö., Aydın M., Ardali S., Yildirim S., Tiras E., Erol A., ...More

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.35, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 35
  • Publication Date: 2020
  • Doi Number: 10.1088/1361-6641/ab94d9
  • Journal Name: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Keywords: hot electron in GaAsBi, power loss, acoustic phonon scattering, n-type modulation doped GaAsBi quantum well, energy relaxation, ELECTRON-ENERGY RELAXATION, ACOUSTIC-PHONON EMISSION, HOT-ELECTRONS, PARAMETERS, GAAS1-XBIX, GAAS
  • Istanbul University Affiliated: Yes

Abstract

We report on the power loss mechanisms of hot electrons in as-grown and annealed n-type modulation-doped Al0.15Ga0.85As/GaAs1-xBix(x= 0 and 0.04) quantum well structures considering acoustic phonon interactions via the deformation potential (non-polar) and piezoelectric (polar) scatterings. The two-dimensional (2D) electron gas is heated by applying various electric fields under a steady-state magnetic field, and the effect of the applied electric field on the Shubnikov de Haas (SdH) oscillations is analyzed to investigate the power loss mechanism. The temperature of hot electrons (T-e) has been obtained by comparing the lattice temperature and applied electric field dependencies of the SdH oscillation amplitude. The hot electron temperature is almost the same for both Bi-free and Bi-containing samples except for the sample annealed at a higher temperature (700 degrees C) than the growth temperature of GaAsBi. The electron temperature dependence of power loss is analyzed using current theoretical analytic models derived for 2D semiconductors. We find that energy relaxation occurs in the intermediate temperature regime, including mixing of piezoelectric and deformation potential scattering. The power loss of hot electrons is found to be proportional to (Te gamma-TL gamma