SILICON-INDUCED LOCAL INTERFACE DIPOLE IN AL GAAS(001) SCHOTTKY DIODES


CANTILE M., SORBA L., YILDIRIM S., FARACI P., BIASIOL G., FRANCIOSI A., ...More

APPLIED PHYSICS LETTERS, vol.64, no.8, pp.988-990, 1994 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 64 Issue: 8
  • Publication Date: 1994
  • Doi Number: 10.1063/1.110927
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.988-990
  • Istanbul University Affiliated: Yes

Abstract

Al/Si/GaAs(001) diode structures grown by molecular beam epitaxy were examined as a function of the thickness of the Si interface layer and the intensity of the As or Al flux employed during Si deposition. We found that Schottky barriers as low as 0.3-0.4 eV (in the presence of a sufficiently high As flux) or as high as 1.0-1.1 eV (in the presence of a sufficiently high Al flux) can be established on n-type GaAs at Si coverages in the submonolayer to monolayer range. We therefore associate the tunability of the barrier height with a Si-induced local interface dipole.