Muonium transitions in 4H silicon carbide


Celebi Y. G., Lichti R. L., Bani-Salameh H. N., Meyer A. G., Carroll B. R., Vernon J. E., ...Daha Fazla

Physica B: Condensed Matter, cilt.404, ss.845-848, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 404
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.physb.2008.11.155
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.845-848
  • İstanbul Üniversitesi Adresli: Evet

Özet

Preliminary low-field data on the diamagnetic muon spin rotation signal in 4H-SiC are presented. The initial results on all three electrical types of 4H-SiC are compared with those for the 6H polytype. Analysis of amplitude transitions at low temperatures in n- and p-type samples indicates carrier capture. At temperatures above 600 K, an increase in diamagnetic amplitude and an associated dip in the phase indicate a slowly formed state in the p-type material. We discuss possible identification of transitions evident from temperature dependent diamagnetic amplitudes and correlations with neutral muonium centers. (c) 2008 Elsevier B.V. All rights reserved.