Electrical and optical properties of point defects in ZnO thin films

Creative Commons License

Can M. M., Shah S. I., Doty M. F., Haughn C. R., Firat T.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.45, sa.19, 2012 (SCI-Expanded) identifier identifier

Özet

We show that the deposition of ZnO films under varying oxygen partial pressure and annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.

We show that the deposition of ZnO films under varying oxygen partial pressure and 
annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.