Akademik Veri Yönetim Sistemi
18th International Nanoscience and Nanotechnology Conference, İstanbul, Türkiye, 26 - 28 Ağustos 2024, ss.42
In this study, the structural properties of 2-in. β-Ga2O3 with various doping (1016-~1019 cm-3) thin film grown by edge-defined-film fed growth method was investigated by non-destructive experimental techniques. Optical transmission measurements show that the optical bandgap energy is independent of the doping density but the intensity of the transmission depends on the doping density. In addition, the absorption coefficient of the β-Ga2O3 slightly changes with doping of Sn atoms. An angle/crystal orientation resolved X-ray rocking curve measurements of the β-Ga2O3 crystal reveals that β-Ga2O3 has monoclinic crystal structure with nanoscale sized grain and their dimensions depends on the crystal direction. An angle/crystal orientation resolved Raman spectroscopy also showed that the β-Ga2O3 has crystalline structure with characteristic Raman peaks. Incorporation of the Sn atoms into β-Ga2O3 are addressed with analyzing Raman and XRD results.