XRD, XPS, and optical characterizations of Al-doped ZnO film grown on GaAs substrate

ŞENADIM TÜZEMEN E., Sahin H., Kara K., ELAGÖZ S., ESEN R.

TURKISH JOURNAL OF PHYSICS, cilt.38, sa.1, ss.111-117, 2014 (ESCI) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 38 Sayı: 1
  • Basım Tarihi: 2014
  • Doi Numarası: 10.3906/fiz-1301-17
  • Dergi Adı: TURKISH JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus, TR DİZİN (ULAKBİM)
  • Sayfa Sayıları: ss.111-117
  • Anahtar Kelimeler: Al-doped zinc oxide, annealing temperature, diffuse and specular reflectance, optical band gap
  • İstanbul Üniversitesi Adresli: Hayır

Özet

A ZnO: Al (10%) thin film was prepared on GaAs(100) substrate by using a pulsed filtered cathodic vacuum arc deposition (PFCVAD) system. The ZnO: Al thin film was thermally annealed for 1 h at 2 different temperatures in air. The film structure was investigated as a function of annealing temperature by X-ray diffraction (XRD). ZnO: Al film annealed at 500 degrees C by PFCVAD method resulted in an amorphous film. However, after annealing ZnO: Al film at 600 degrees C, it showed (100) and (002) peaks at around 32 degrees and 34 degrees, respectively. The chemical state of ZnO: Al (AZO) film on GaAs substrate was investigated by using X-ray photoelectron spectroscopy (XPS). The dependence of optical properties on annealing was investigated by using a UV-VIS-NIR spectrophotometer. We also obtained the energy gap of ZnO: Al thin film by diffused reflectance spectra using the Kubelka-Munk function.