The magnetization in (Zn1-xCox)Ga2O4 (x=0.05, 0.10, and 0.20) diluted magnetic semiconductors depending on Co atoms in tetrahedral and octahedral sites

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Can M. M.

JOURNAL OF MATERIALS RESEARCH, cilt.29, sa.9, ss.1062-1068, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 29 Sayı: 9
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1557/jmr.2014.86
  • Dergi Adı: JOURNAL OF MATERIALS RESEARCH
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1062-1068
  • Anahtar Kelimeler: wide band gap semiconductors, zinc gallate, oxide diluted magnetic semiconductors, OPTICAL-PROPERTIES, CHEMICAL-SYNTHESIS, BLUE LUMINESCENCE, GLASS-CERAMICS, ZNGA2O4, FERROMAGNETISM, EMISSION, GREEN, SPINTRONICS, PERFORMANCE
  • İstanbul Üniversitesi Adresli: Hayır

Özet

The present study describes magnetic interactions in (Zn1-xCox)Ga2O4 (x = 0.05, 0.10, and 0.20) particles dependant on Co atoms in both tetrahedral and octahedral sites. The effects of substituted Co atoms to magnetic character are analyzed using Curie-Weiss law. The ferromagnetic character is found dominant in (Zn1-xCox)Ga2O4 semiconductors for x values lower than 0.10; in addition, a specific hysteresis with 139 +/- 50 Oe coercivity is observed for 5% Co-doped ZnGa2O4. The high Co amount in tetrahedral site increased the number of antiferromagnetic couplings and the hysteresis at 300 K disappeared for (Zn0.80Co0.20)Ga2O4 particles. Furthermore, the Co+3 ions in the octahedral site decreased mu(eff) values, per Co amounts, in the range of 4.89 +/- 0.01 mu(B)/Co to 4.44 +/- 0.02 mu(B)/Co, because of enhancing paramagnetic behaviors.

The present study describes magnetic interactions in (Zn1–x Co x )Ga2O4 (x = 0.05, 0.10, and 0.20) particles dependant on Co atoms in both tetrahedral and octahedral sites. The effects of substituted Co atoms to magnetic character are analyzed using Curie–Weiss law. The ferromagnetic character is found dominant in (Zn1–x Co x)Ga2O4 semiconductors for x values lower than 0.10; in addition, a specific hysteresis with 139 ± 50 Oe coercivity is observed for 5% Co-doped ZnGa2O4. The high Co amount in tetrahedral site increased the number of antiferromagnetic couplings and the hysteresis at 300 K disappeared for (Zn0.80Co0.20)Ga2O4 particles. Furthermore, the Co+3 ions in the octahedral site decreased µeff values, per Co amounts, in the range of 4.89 ± 0.01 µB/Co to 4.44 ± 0.02 µB/Co, because of enhancing paramagnetic behaviors.