The formation of anomalous Hall effect depending on W atoms in ZnO thin films

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Can M. M., Shah S. I., Firat T.

APPLIED SURFACE SCIENCE, cilt.303, ss.76-83, 2014 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 303
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.apsusc.2014.02.079
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.76-83
  • İstanbul Üniversitesi Adresli: Hayır

Özet

article investigates the effects of intrinsic point defects and extrinsic W atoms on magneto electrical properties in the ZnO lattice. The analyses were accomplished for similar to 0.5% W including ZnO thin films, grown using a radio frequency (RF) magnetron sputtering system. The polarized spin current dependent magnetic formation was investigated by longitudinal and transverse magneto electrical measurements in a temperature range of 5 K to 300 K. The positive magneto resistivity (PMR) ratios reached 28.8%, 12.7%, and 17.6% at 5 K for thin films, having different post-deposition annealing conditions as a consequence of ionic W dependent defects in the lattice. Furthermore, an anomalous Hall effect, originating from polarized spin currents, was understood from the split in Hall resistance versus magnetic field (R-xy(H)) curves for the thin film with high amount of Zn2+ and W6+ ionic defects. (C) 2014 Elsevier B.V. All rights reserved.

This article investigates the effects of intrinsic point defects and extrinsic W atoms on magneto electrical properties in the ZnO lattice. The analyses were accomplished for ∼0.5% W including ZnO thin films, grown using a radio frequency (RF) magnetron sputtering system. The polarized spin current dependent magnetic formation was investigated by longitudinal and transverse magneto electrical measurements in a temperature range of 5 K to 300 K. The positive magneto resistivity (PMR) ratios reached 28.8%, 12.7%, and 17.6% at 5 K for thin films, having different post-deposition annealing conditions as a consequence of ionic W dependent defects in the lattice. Furthermore, an anomalous Hall effect, originating from polarized spin currents, was understood from the split in Hall resistance versus magnetic field (Rxy(H)) curves for the thin film with high amount of Zn2+ and W6+ ionic defects.