Transition dynamics for Mu acceptor states in Si 1-x Ge x alloys

Jayarathna G., Lichti R. L., Mengyan P. W., Celebi Y. G., Baker B. B., Carroll B. R., ...Daha Fazla

2014 IEEE International Conference on Automation Science and Engineering, CASE 2014, Taipei, Tayvan, 18 - 22 Ağustos 2014, cilt.1583, ss.56-59 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1583
  • Doi Numarası: 10.1063/1.4865604
  • Basıldığı Şehir: Taipei
  • Basıldığı Ülke: Tayvan
  • Sayfa Sayıları: ss.56-59
  • İstanbul Üniversitesi Adresli: Evet

Özet

We use the longitudinal field muon spin relaxation technique to observe charge-state and site-change transitions of muonium in Si1-xGex alloys. In this project, we examine the temperature and magnetic field dependences of the relaxation rates for Si1-xGex samples (x = 0.77, 0.81, and 0.84), in the composition range where the acceptor level lies within the band gap. This study particularly focuses on the relaxation rates for Si0.19Ge0.81 to identify various cyclic charge-state and site-change processes as a function of both temperature and magnetic field. We extract the paramagnetic hyperfine constant and the relevant transition rate parameters for site changes and charge-state transitions involving Mu acceptor states for this sample. At small x, a site change dominates the transition out of the neutral T-site acceptor state, while in higher Ge content alloys hole ionization becomes the dominant transition out of the Mu(T)(0).