Temperature-dependent sandwich and in-plane optical characterization of ternary chalcogenide TlSbS2


SARCAN F., Aydin M., KURUOĞLU F., DÖNMEZ Ö., YILDIRIM S., EROL A.

Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol.272, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 272
  • Publication Date: 2021
  • Doi Number: 10.1016/j.mseb.2021.115322
  • Journal Name: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Ternary chalcogenide, Tlsbs(2), Photoconductivity, Photoluminescence, Anisotropy, THIN-FILMS, PHOTOCONDUCTIVITY, SEMICONDUCTOR, ABSORPTION, ANISOTROPY, TISBS2, EDGE, GAP
  • Istanbul University Affiliated: Yes

Abstract

© 2021 Elsevier B.V.We have studied the temperature-dependent optical absorption and emission mechanisms of ternary chalcogenide TlSbS2 by carrying out sandwich and planar photoconductivity, and photoluminescence measurements in the temperature range 30 K to 300 K. Two main transitions were observed in the room temperature photoconductivity spectrum at energies of 1.74 and 1.84 eV, which are attributed to a native acceptor–donor transition and a band-to-band transition, respectively. A spectral anisotropy near the bandgap energy of TlSbS2 is observed between the sandwich and in-plane photoconductivity spectrum. In the photoluminescence spectrum, we observed deep-level broadband emission which is correlated with the native defect-related transition-based free-to-bound recombination between 30 K and 70 K. The Debye temperature of TlSbS2 was found to be 280 K, and the thermal expansion coefficient was determined as 1.62×10-3eV/K from the analyses of its temperature-dependent photoconductivity spectra.