Detailed study on effects of gate voltage, frequency and temperature on dielectric properties of Cu/PAr/n-CdS/SnO2 MIS Schottky diode


KURUOĞLU F., ÇALIŞKAN M., YILDIRIM S., SERİN M.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol.54, no.14, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 54 Issue: 14
  • Publication Date: 2021
  • Doi Number: 10.1088/1361-6463/abd80e
  • Journal Name: JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: dielectric spectroscopy, polymer films, hybrid junction, interface states, semiconductor thin films, ELECTRICAL-PROPERTIES, CONDUCTIVITY, OXIDE
  • Istanbul University Affiliated: Yes

Abstract

In this paper, CdS based metal-insulator-semiconductor (MIS) diode was fabricated by using the Polyarylate (PAr) film as insulator dielectric on transparent conductive glass substrate. The dielectric parameters such as dielectric constant (epsilon '), loss (epsilon), loss tangent (tan delta), ac conduc-tivity (sigma(AC)) and complex modulus (M '