A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al (x) Ga1-x As quantum well structures

Donmez Ö., Nutku F., Erol A., Arikan C. M., Ergun Y.

NANOSCALE RESEARCH LETTERS, cilt.7, 2012 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 7
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1186/1556-276x-7-622
  • Dergi Adı: NANOSCALE RESEARCH LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • İstanbul Üniversitesi Adresli: Evet

Özet

In this study, photomodulated reflectance (PR) technique was employed on two different quantum well infrared photodetector (QWIP) structures, which consist of n-doped GaAs quantum wells (QWs) between undoped Al (x) Ga1-x As barriers with three different x compositions. Therefore, the barrier profile is in the form of a staircase-like barrier. The main difference between the two structures is the doping profile and the doping concentration of the QWs. PR spectra were taken at room temperature using a He-Ne laser as a modulation source and a broadband tungsten halogen lamp as a probe light. The PR spectra were analyzed using Aspnes' third derivative functional form.