Evidence for a shallow muonium acceptor state in Ge-rich Cz-Si1-xGex

Carroll B. R., Lichti R. L., Celebi Y. G., Chow K. H., King P. J. C., Yonenaga I.

PHYSICA B-CONDENSED MATTER, cilt.404, ss.5113-5116, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 404
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.physb.2009.08.245
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.5113-5116
  • İstanbul Üniversitesi Adresli: Evet

Özet

We have observed muon spin rotation (mu SR) features that are consistent with a shallow muonium (Mu) acceptor state for several Ge-rich silicon germanium alloy compositions. The Mu(T)[0/-] defect level crosses into the valence band at a Ge content of roughly 92%, indicating that a shallow acceptor state should be formed for muons that stop in the acceptor related T-site. For Si0.09Ge0.91, the difference between the diamagnetic amplitudes from RF-driven resonance measurements compared to TF-mu SR indicates a slowly formed state at temperatures below 50 K, consistent with a valence-band resonant Mu(-) that would form the core of a shallow Mu acceptor. We report a summary of hyperfine characterization and transition energies of the various T-site muonium states in Ge-rich alloys and discuss options for the conditions under which shallow acceptor states may be observed by mu SR. (C) 2009 Elsevier B.V. All rights reserved.