Spectroscopic Studies of the Effect of Sputter Etching on beta-FeSi2 Film Growth

Tatar B., Kutlu K., Ürgen M. K.

Balkan Physics Latter, cilt.18, sa.1, ss.79-88, 2010 (Hakemli Dergi)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 18 Sayı: 1
  • Basım Tarihi: 2010
  • Dergi Adı: Balkan Physics Latter
  • Sayfa Sayıları: ss.79-88
  • İstanbul Üniversitesi Adresli: Hayır

Özet

This study aims to better understand the surface modifications created by

an in situ surface etching process applied with a neutral molecule source prior to iron

coating which made it possible to grow beta-FeSi2 films on Si substrates without any

further heat treatment. The n and p- type Si substrates were sputter-etched by a

neutral molecule source, using Ar molecules, before they were coated. This process

caused surface defects, thus provided faster diffusion of the iron (Fe) into the silicon

(Si). The sputter-etched Si (100) and (111) substrates were then investigated by

Fourier transform infrared (FTIR) spectroscopy in order to clarify the effects of

surface etching. The IR transmittance spectra showed a decrease in intensity in the

silicon bands after the etching process. The beta-FeSi2 thin films were prepared by

unbalanced magnetron sputtering on sputter-etched Si (100) and Si (111) substrates

at ambient temperature. The deposition of iron on the etched silicon surfaces resulted

in the formation of beta-FeSi2 which was clearly indicated by X-ray diffraction and

Raman analysis. After the deposition of Fe and formation of beta-FeSi2 an increased

transmittance in the Si band region was observed on the FTIR spectra and the peaks

belonging to Si–Si and Si–O–Si vibration bands were reversed after the iron

deposition.