Muonium states and dynamics in 4H and 6H silicon carbide

Bani-Salameh H. N., ÇELEBİ Y. G., Chow K. H., Coss B., Cox S., Lichti R.

PHYSICA B-CONDENSED MATTER, cilt.374, ss.368-371, 2006 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 374
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1016/j.physb.2005.11.103
  • Dergi Adı: PHYSICA B-CONDENSED MATTER
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.368-371
  • İstanbul Üniversitesi Adresli: Evet

Özet

Two isotropic Mu(0) centers are found in 4H Silicon Carbide (SiC) and a total of four Mu(0) states are seen in the 6H-SiC polytype. We report the temperature dependence of hyperfine constants, signal amplitudes, and relaxation rates for three Mu(0) centers in p-type 6H-SiC from spin precession data at 6T. Low-field results for the diamagnetic fraction imply two ionization steps with energies of 0.21 and 0.88 eV. Additional dynamics seen in several different SiC samples are discussed; however, specific assignments of site or charge-state transitions are not yet certain. (c) 2005 Elsevier B.V. All rights reserved.