In this study, we investigated the Cu-doped ZnO (CZO) structure. This structure was deposited on the Si and glass substrates using the RF magnetron sputtering technique. Morphological and structural features of CZO thin films (CZOs), as-deposited and annealed at temperatures of 200, 400, and 600 degrees C, were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), as well as atomic force microscopy (AFM). CZO film annealed at temperature of 600 degrees C has a sharp peak, good homogeneity, and low surface roughness compared to others. Electrical properties of the MOS structures, which are of CZO interlayer, deposited on n-Si substrate, were characterized by I(V) measurement at room temperature. The fundamental electrical parameters were calculated by analyzing the forward-bias I(V) curves at room temperature. The series resistance R-s values of the device were also determined using thermionic emission theory and Cheung and Cheung methods. According to experimental results, Au|CZO|n-Si MOS structure annealed at 600 degrees C has low R-s values compared to other investigated MOS structures in the present study. As a result, it was found that CZO structure annealed at 600 degrees C is suitable for innovative and state-of-the-art electronic and optoelectronic device applications.