THE DETERMINATION OF BARRIER HEIGHT DURING VERTICAL TRANSPORT IN GaAs/AlXGa1-XAs QUANTUM WELL STRUCTURES

Algun G.

SIGMA JOURNAL OF ENGINEERING AND NATURAL SCIENCES-SIGMA MUHENDISLIK VE FEN BILIMLERI DERGISI, cilt.26, sa.3, ss.206-215, 2008 (ESCI) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 26 Sayı: 3
  • Basım Tarihi: 2008
  • Dergi Adı: SIGMA JOURNAL OF ENGINEERING AND NATURAL SCIENCES-SIGMA MUHENDISLIK VE FEN BILIMLERI DERGISI
  • Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Academic Search Premier, Directory of Open Access Journals
  • Sayfa Sayıları: ss.206-215
  • Anahtar Kelimeler: Vertical transport, quantum well, hot electron, barrier height
  • İstanbul Üniversitesi Adresli: Evet

Özet

In this work, how the changing of barrier height in GaAs/AlxGa1-xAs quantum well structures during vertical transport according to applied voltage, sample diameter and number of wells has been experimentally determined. The samples investigated here have 0, 2, 4, 7 and 10 quantum wells. To investigate the effect of sample diameter on barrier height, we used the samples with diameters of 100, 200, 400 and 800 mu m. A voltage, parallel to growth direction, varies between 10 mV and 600 mV is applied. The barrier height values are being different which is determined from the current- temperature curves can be explained by the existence of space charges. The increasing the applied constant voltages reduce the barrier height and occurring a small difference on barrier height for the different diameter and increasing the number of well reduce the effect of the space charge has been determined.