Temperature dependence of the threshold electric field in a hot electron VCSEL

Serpenguzel A., Balkan N., Erol A., Arikan M., Roberts J.

Conference on Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, San-Jose, Kostarika, 24 - 27 Ocak 2005, cilt.5725, ss.194-201 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 5725
  • Doi Numarası: 10.1117/12.591107
  • Basıldığı Şehir: San-Jose
  • Basıldığı Ülke: Kostarika
  • Sayfa Sayıları: ss.194-201
  • İstanbul Üniversitesi Adresli: Evet

Özet

The operation of the Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure - Vertical Cavity Surface Emitting Laser (HELLISH-VCSEL) devices is based on hot carrier transport parallel to the layers of Ga1-xAlxAs p-n junction. It is therefore a field - effect device and the light emission from the device is independent of the polarity of the applied voltage. In this study, we present the temperature dependence of the operational characteristics of the device. Experimental studies comprising of the measurements of the IN characteristics, electroluminescence, reflectivity, and temperature dependent light-applied electric field (L-F) characteristics are conducted to find the optimum operating temperature of the device.