Research Information System
18th International Nanoscience and Nanotechnology Conference (NanoTR-18), İstanbul, Turkey, 26 - 28 August 2024, vol.1, no.80, pp.160, (Summary Text)
2D Transition Metal Dichalcogenides (TMDs) have emerged as promising alternatives to Si-based technologies. Major challenges on TMDs are their low carrier concentrations, mobility, and high contact resistance. Several studies have aimed to eliminate these issues by post-growth doping of TMDs with chemicals such as 1,2-dichloroethane (DCE) solution, and this has been successfully demonstrated for MoS2 and MoTe2. We present an in-depth analysis of the effect of chemical doping on the optical properties of MoS2 and MoTe2 by employing photoluminescence (PL), Raman measurements, and density functional theory (DFT). A significant drop, exceeding 50%, in the PL intensity of the indirect transition of MoS2 without having a noticeable effect on its direct transition, while the possible excitonic trations were affected on MoTe2. It has been attributed to Cl-based midgap defects which cause the non- radiated recombinations for lower energy transitions.