Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift

Balkan N., Mazzucato S., Erol A., Hepburn C., Potter R., Boland-Thoms A., ...Daha Fazla

IEE PROCEEDINGS-OPTOELECTRONICS, cilt.151, sa.5, ss.284-289, 2004 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 151 Sayı: 5
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1049/ip-opt:20040935
  • Dergi Adı: IEE PROCEEDINGS-OPTOELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.284-289
  • İstanbul Üniversitesi Adresli: Evet

Özet

An investigation is presented of thermal annealing effects on spectral photoconductivity and photoluminescence in sequentially grown GaInNAs/GaAs and GaInAs/GaAs quantum well structures. Experiments have been carried out at temperatures between 30 K and 300 K. The results indicate that thermal annealing improves the optical quality of GaInNAs, but may cause either a blue shift, as commonly observed by other groups, or a red shift depending on the growth technique. The anneal-induced blue-shift behaviour can be explained in terms of two competing mechanisms involving the redistribution of nearest-neighbour configuration and the change of quantum well profile. The red shift is explained in terms of hydrogen-induced chemical effects.