Relaxation spectrum of the TlSbSe2 thin films

Deger D., Ulutas K., Yildirim S., Kalkan N.

PHYSICA B-CONDENSED MATTER, vol.404, pp.5231-5233, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 404
  • Publication Date: 2009
  • Doi Number: 10.1016/j.physb.2009.08.311
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.5231-5233
  • Istanbul University Affiliated: Yes


The dielectric constant and the dielectric loss of TlSbSe2 thin films, obtained via thermal evaporation of TlSbSe2 crystals grown by Stockber-Bridgman technique, have been measured using ohmic Al electrodes in the frequency range 0.2-100 KHz and within the temperature interval 293-353 K. The capacitance are found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated too. A good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements has been observed. (C) 2009 Elsevier B.V. All rights reserved.