Akademik Veri Yönetim Sistemi
Akdeniz Mühendislik Dergisi, cilt.3, sa.1, ss.45-55, 2025 (Hakemli Dergi)
The characterization of defect levels within a semiconductor using capacitive methods is based on manipulating the width of the depletion region through pulsed biasing. During the measurement, the processes of charge emission and subsequent charge capture at the defect energy levels occur sequentially. The aim of this study is to investigate defect energy levels by analyzing both charge capture and emission processes and to determine the capture cross section using the capture capacitance transient signal. In this study, a method is proposed where the capture cross section could be calculated directly from the capture capacitance transient signals. The charge capture process occurs in two distinct regions, known as the fast and slow capture regions, with the slow capture region becoming dominant under specific conditions. In this study, the activation energy of the defect level in the boron-doped Si sample was determined to be in the range of 0.159–0.216 eV using the Deep Level Transient Spectroscopy (DLTS) method. The capture cross section was determined as an average of σn = 1.03 × 10−16cm2 from the capacitance transient signals of the charge emission process. In contrast, when using the capture capacitance transient signals, the average value of the capture cross section was calculated as 5.62 × 10−11cm2