Investigating above-bandgap and below-bandgap optical transition in GaBiAs epilayers by photoreflectance spectroscopy


DÖNMEZ Ö. , EROL A.

TURKISH JOURNAL OF PHYSICS, vol.44, no.4, pp.384-393, 2020 (Journal Indexed in ESCI) identifier

  • Publication Type: Article / Article
  • Volume: 44 Issue: 4
  • Publication Date: 2020
  • Doi Number: 10.3906/fiz-2003-17
  • Title of Journal : TURKISH JOURNAL OF PHYSICS
  • Page Numbers: pp.384-393

Abstract

We present optical identification of deep level defects in as-grown and annealed GaBixAs(1-x) (x = 0, 0.013 and 0.015) alloys grown at different temperatures (220 degrees C and 320 degrees C) by using photo-modulated reflectance (PR) spectroscopy and photoluminescence (PL). The PR measurements are employed at above- and below-bandgap excitations, and the PR line-shape is analyzed by the third derivative functional form (TDFF). The PR at below-bandgap excitation reveals transitions at 0.757 +/- 0.001 eV and 0.710 +/- 0.002 eV at 30K and 300K, respectively. Franz-Keldysh oscillations are observed in all samples under above-bandgap excitation at PR measurements, and the built-in electric field, which may originate from the charged As-antisite defects is calculated from local extrema points in the PR spectra. The decrease in the built-in electric field after thermal annealing is explained with decreased point defect density.