International Conference on Memristive Materials, Devices & Systems, Atina, Greece, 3 - 06 April 2017, pp.1, (Full Text)
In this paper, a simple compact circuit based on Hodgkin-Huxley neuron model is investigated. This neuron model has two channels with nonlinear resistors, which is capable of generating regular spiking. These channels are implemented using floating nonlinear resistors, a capacitor and two transistors. The non-linear floating resistors behave as memristor since they depict pinched hysteresis loop and non-volatile characteristics. The nonlinearity is provided by using transistors to be operated in subthreshold region. All simulations have been carried out by using TSMC 0.18 μm CMOS process model parameter.