STRUCTURAL AND PHOTOELECTRONIC PROPERTIES OF THALLIUM INDIUM SULFIDE


KALKAN N. , Papadopoulos D., Anagnostopoulos A. N. , Spyridelis J.

MATERIALS RESEARCH BULLETIN, cilt.28, ss.693-707, 1993 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 28 Konu: 7
  • Basım Tarihi: 1993
  • Doi Numarası: 10.1016/0025-5408(93)90113-r
  • Dergi Adı: MATERIALS RESEARCH BULLETIN
  • Sayfa Sayıları: ss.693-707

Özet

A structural investigation by Transmission Electron Microscopy confirmed the presence of planar faults parallel to the (001)tetr-plane of TlInS2. Their density corresponds to a mean repeat distance of about eight times the lattice parameter c. On the other hand, two energy levels forming two subbands and acting as hole traps at 0.028 and 0.050 eV above the valence band edge of TlInS2 were determined by an analysis of modulated photocurrents induced by an intensity modulated light beam. Their capture coefficients were of the order of magnitude 10(-13) and 10(-15) cm3 s-1 at 300 K, respectively.

 A structural investigation by Transmission Electron Microscopy confirmed the presence of planar faults parallel to the (001)tetr-plane of TlInS2. Their density corresponds to a mean repeat distance of about eight times the lattice parameter c. On the other hand, two energy levels forming two subbands and acting as hole traps at 0.028 and 0.050 eV above the valence band edge of TlInS2 were determined by an analysis of modulated photocurrents induced by an intensity modulated light beam. Their capture coefficients were of the order of magnitude 10(-13) and 10(-15) cm3 s-1 at 300 K, respectively.