Thickness dependence of optical properties of amorphous indium oxide thin films deposited by reactive evaporation

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Atıf İçin Kopyala

Ulutas K., Deger D., Skarlatos Y.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, cilt.203, sa.10, ss.2432-2437, 2006 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 203 Sayı: 10
• Basım Tarihi: 2006
• Doi Numarası: 10.1002/pssa.200521321
• Dergi Adı: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.2432-2437
• İstanbul Üniversitesi Adresli: Evet

Özet

The electrical conductivity and absorption coefficient of amorphous indium oxide thin films, thermally evaporated on glass substrates at room temperature, were evaluated. For direct transitions the variation of the optical band gap with thickness was determined and this variation was supposed to appear due to the variation of localized gap states, whereas the variation of conductivity with thickness was supposed to be due to the variation of carrier concentration. We attribute the variation of absorption coefficient with thickness to the variation of optical band gap energy rather than optical interference. (c) 2006 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.