High-Field Electron-Drift Velocity in n-Type Modulation-Doped GaAs<sub>0.96</sub>Bi<sub>0.04</sub> Quantum Well Structure

Aydin M., Mutlu S., Erol A., Puustinen J., Hilska J., Guina M., ...Daha Fazla

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, cilt.16, sa.11, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16 Sayı: 11
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1002/pssr.202200204
  • Dergi Adı: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: GaAsBi, high field transport, modulation-doped GaAsBi, saturation velocities, OPTICAL-PROPERTIES, CARRIER MASSES, GABIAS, GAAS
  • İstanbul Üniversitesi Adresli: Evet

Özet

The drift velocity (v(drift)) of electrons in an n-type modulation-doped GaAs0.96Bi0.04/Al0.15Ga0.85As quantum well (QW) structure is determined for electric fields (F) ranging from approximate to 0.4 to 3.58 kV cm(-1). The resulting v(drift) characteristic exhibited a linear increase and reached approximate to 6 x 10(6) cm s(-1) at low electric fields then almost saturated with increasing electric field. The electron drift mobility is determined as 2265 cm(2) Vs(-1) in the regime where the drift velocity is linear with respect to the electric field. The drift velocity saturates at approximate to 6.1 x 10(6) cm s(-1) at the electric fields between approximate to 2.7 and 3.4 kV cm(-1). Saturation of the drift velocity is attributed to the transfer of the electrons from the QW layer (GaAs0.96Bi0.04) with higher electron mobility to the barrier layer (Al0.15Ga0.85As) and satellite valley L-valley with lower electron mobility, which initiates cooling of electrons via phonon scattering in the sample.