The effect of Fe content on the dielectric properties of TlGa(0,999)Fe(0,001)S2 thin films

Bakran H., YAKUT Ş., BOZOĞLU PARTO D., Deger D., Ismailova P., Mustafaeva S., ...Daha Fazla

Physica B: Condensed Matter, cilt.685, 2024 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 685
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1016/j.physb.2024.416031
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Ac conductivity, Chalcogenides, Dielectric properties, Electric polarization, Thin films
  • İstanbul Üniversitesi Adresli: Evet

Özet

0,1 % iron containing Thallium Gallium Sulfide (TlGaS2 and TlGa(0,999)Fe(0,001)S2) thin films were deposited by thermal evaporation in the thickness range 20–200 nm. Raw bulk TlGaS2 and TlGa(0,999)Fe(0,001)S2 crystals were produced using the Bridgman technique. Iron (Fe) content was free, and the bonding content of a polarized charged group in the crystal and thin films was detected in the X-ray diffraction patterns. The dielectric characteristics of the thin films were determined by dielectric spectroscopy. The dielectric results showed Fe content polarizing in space-charge characteristics in the 1–100 Hz frequency range. Besides, the position and magnitude of dipolar polarization supported the presence of dipolar polarized charged groups having Fe content. In addition, it was realized that the void density explicitly affects the dielectric constant. The void density decreased toward higher thicknesses, whereas the dielectric constant increased. The ac conductivity results contributed to evaluating the effect of thickness for each thin film. The overall analysis indicated that even a small percentage of Fe (0,1 %) has a remarkable impact on the dielectric properties and electrical conduction of TlGa(0,999)Fe(0,001)S2 thin films. This analysis can provide opportunities to improve the electrical abilities of Thallium Gallium Sulfide (TlGaS2) thin films, which have applications as receivers of visible and infrared emission, X-ray and gamma-ray detectors, neutron detectors, barometers, and piezoelectric photoresistors if the presence of Fe is considered as investigated in TlGa1−xFexS2 thin films.