Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures


Khalil H. M. , Mazzucato S., Ardali S., Celik O., Mutlu S. , Royall B., ...Daha Fazla

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.177, sa.10, ss.729-733, 2012 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 177 Konu: 10
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.mseb.2011.12.022
  • Dergi Adı: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
  • Sayfa Sayıları: ss.729-733

Özet

The photoconductivity of p-i-n GaInNAs/GaAs multiple quantum well (MQW) mesa structures is investigated. When illuminated with photons at energy greater than the GaAs bandgap, a number of oscillations are observed in the current-voltage I-V characteristics. The amplitude and position of the oscillations is shown to depend upon the temperature, as well as upon the exciting wavelength and intensity. Due to the absence of the oscillations in the dark I-V and at temperatures above T=200 K, we explain them in terms of photogenerated electrons escaping from quantum wells via tunnelling or thermionic emission.

The photoconductivity of p-i-n GaInNAs/GaAs multiple quantum well (MQW) mesa structures is investigated. When illuminated with photons at energy greater than the GaAs bandgap, a number of oscillations are observed in the current-voltage I-V characteristics. The amplitude and position of theoscillations is shown to depend upon the temperature, as well as upon the exciting wavelength and intensity. Due to the absence of the oscillations inthe dark I-V and at temperatures above T=200 K, we explain them in terms of photogenerated electrons escaping from quantum wells via tunnelling or thermionic emission. 

Magnetic fields up to B = 11T were applied parallel to the planes of the QWs. A small voltage shift in the position of the oscillations was observed, proportional to the magnetic field intensity and dependent upon the temperature. Calculation of the Landau level energy separation (16 meV) agrees with the observed experimental data. Magneto-tunnelling spectroscopy probes in detail the nature of band- or impurity-like states responsible for resonancesin first and second subbands, observing the I-V plot in dark condition and under illumination. The field-dependence of the amplitude of the oscillation peaks in I-V has the characteristic form of a quantum mechanical admixing effect. This enhancement is also probably due to the hole recombination with majority electrons tunnelling in the N-related states of the quantum wells. (C) 2011 Elsevier B.V. All rights reserved.